FDS89161 mosfet equivalent, dual n-channel mosfet.
General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
*.
* Synchronous Rectifier
* Primary Switch For Bridge Topology
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
SO-8
D2 5
D2 6
.
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